Magneto Resistive RAM Market To Reach $21.14 Billion By 2030

Magneto Resistive RAM Market Growth & Trends

The global magneto resistive ram market size is expected to reach USD 21.14 billion in 2030 and is projected to grow at a CAGR of 38.3% from 2025 to 2030. Non-volatile memories, such as MRAM and Resistive random Access Memory (RRAM/ReRAM), are expected to replace the existing volatile memories such as Dynamic Random Access Memory (DRAM) and Static Random-Access Memory (static RAM or SRAM). The replacement would be possible due to different benefits offered by the advance non-volatile memories. The existing flash memories are facing technological limits; and their further advancements are expected to increase their costs, thus, leading to the invention of non-volatile memories that are capable of avoiding data loss on power discharge.

The standalone markets, such as wearables, embedded Multipoint Control Unit (MCU)s, smart cards, and storage class memories for enterprise storage, are expected to offer immense opportunities to the market.

The first generation MRAM and second generation Spin-Transfer Torque MRAM (STT-MRAM) are expected to replace traditional DRAMs and SRAMs. Initially, the prices associated with these memories are expected to be high, which would reduce with the increasing rates of developments.

Moreover, the increasing demand of these memories is predicted to promote the demand for equipment, used in their manufacturing. The manufacturing of these memories require specialized fabrication equipment, similar to those used in magnetic read sensors. Thus, promoting the growth of capital equipment required for manufacturing of non-volatile memories equipment.

The market may face challenges due to its complex structure and high costs of manufacturing of memories. However, these challenges can be circumvented by technological advancements and increased production.

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Magneto Resistive RAM Market Report Highlights

• The North America led the market with 36.9% of the global revenue share in 2024, owing to the presence of leading players and growing R&D activities.

• STT-MRAM is expected to maintain market dominance due to its wide application, higher performance, thermal stability, and greater compatibility.

• The Asia Pacific region is predicted to emerge as the fastest-growing market due to the increased penetration of cloud computing and improvements in the present infrastructures of data centers, in developing nations.

• Strategic partnerships accompanied, by the increasing innovation and research & development activities, are being observed in the industry.

Magneto Resistive RAM Market Segmentation

Grand View Research has segmented the global Magneto Resistive RAM market report based on material, application, and region:

Magneto Resistive RAM Material Outlook (Revenue, USD Million, 2018 - 2030)

• Toggle MRAM

• Spin-Transfer Torque MRAM (STT-MRAM)

Magneto Resistive RAM Application Outlook (Revenue, USD Million, 2018 - 2030)

• Automotive

• Consumer Electronics

• Robotics

• Enterprise Storage

• Aerospace & Defense

• Others

Magneto Resistive RAM Regional Outlook (Revenue, USD Million, 2018 - 2030)

• North America

  • U.S.

  • Canada

  • Mexico

• Europe

  • UK

  • Germany

  • France

• Asia Pacific

  • Japan

  • India

  • China

  • Australia

  • South Korea

• Latin America

  • Brazil

• Middle East & Africa

  • South Africa

  • Saudi Arabia

  • UAE

List of Key Players in Magneto Resistive RAM Market

• Avalanche Technology

• CROCUS NANO ELECTRONICS LLC

• Everspin Technologies Inc.

• Honeywell International Inc.

• Infineon Technologies AG

• Intel Corporation

• Numem Inc.

• NVE Corporation

• SAMSUNG

• Renesas Electronics Corporation